3DG6型NPN型硅高频小功率三极管参数
表1.1.14：
| 原型号 |
3DG6 |
测试条件 | ||||||
| 新型号 |
3DG100A |
3DG100B |
3DG100C |
3DG100D | ||||
极限参数 |
PCM(mW) |
100 |
100 |
100 |
100 |
|||
ICM(mA) |
20 |
20 |
20 |
20 |
||||
BVCBO(V) |
≥30 |
≥40 |
≥30 |
≥40 |
Ic=100μA | |||
BVCEO(V) |
≥20 |
≥30 |
≥20 |
≥30 |
Ic=100μA | |||
BVEBO(V) |
≥4 |
≥4 |
≥4 |
≥4 |
IE=100μA | |||
直流参数 |
ICBO(μA) |
≤0.01 |
≤0.01 |
≤0.01 |
≤0.01 |
VEB=10V | ||
ICEO(μA) |
≤0.1 |
≤0.1 |
≤0.1 |
≤0.1 |
VCE=10V | |||
IEBO(μA) |
≤0.01 |
≤0.01 |
≤0.01 |
≤0.01 |
VEB=1.5V | |||
VBES(V) |
≤1 |
≤1 |
≤1 |
≤1 |
Ic=10mA IB=1mA | |||
VCES(V) |
≤1 |
≤1 |
≤1 |
≤1 |
Ic=10mA IB=1mA | |||
hFE |
≥30 |
≥30 |
≥30 |
≥30 |
VCE=10V Ic=3mA | |||
| 交流 参数 |
fT(MHz) |
≥150 |
≥150 |
≥300 |
≥300 |
VCE=10V IE=3mA f=100MHz RL=5Ω | ||
Kp(dB) |
≥7 |
≥7 |
≥7 |
≥7 |
VCE=-6V IE=3mA f=100MHz | |||
Cob(pF) |
≤4 |
≤4 |
≤4 |
≤4 |
VCE=10V IE=0 | |||
hFE色标分档 (红)30~60； (绿)50~110； (蓝)90~160； (白)>150
